| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1316 |
ROHM |
N/a |
2500 |
 |
Power Transistor (−100V , −2A) |
2SB1316 TL ROHM, Power Transistor
2SB1316 TL R ROHM
2SB1316MCTL ROHM
2SB1316TL ROHM, Power Transistor
2SB1316-TL rohm, Power Transistor
2SB1316TR ROHM
2SB1316 , Power Transistor (−100V , −2A)
2SB1317 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SB1321 ,TransistorAbsolute Maximum Ratings (Ta=25°C)l Package DimensionsItem , Symbol - Value UnitCollector—Bése 2531 ..
2SB1321A ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.10 +0.100.45 0.45–0.05 –0.05Colle ..
2SB1322 ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
2SD1140 ,Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD1145 ,NPN Epitaxial Planar Silicon Transistor High-Current Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1149 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
