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Partno Mfg Dc Qty AvailableDescript
2SB1308 T100Q ROHM N/a 125800



2SB1316 , Power Transistor (−100V , −2A)
2SB1317 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SB1321 ,TransistorAbsolute Maximum Ratings (Ta=25°C)l Package DimensionsItem , Symbol - Value UnitCollector—Bése 2531 ..
2SB1321A ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.10 +0.100.45 0.45–0.05 –0.05Colle ..
2SB1322 ,Silicon PNP epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitCollector-base ..
2SD1136 , Silicon NPN Power Transistors
2SD1136 , Silicon NPN Power Transistors
2SD1140 ,Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
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