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2SB1295SANYON/a118404avaiPNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications


2SB1295 ,PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1296 ,PNP Epitaxial Planar Silicon Transistors AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SB1302 ,Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCPMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --25 ..
2SB1306 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SB1308 , Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.
2SB1316 , Power Transistor (−100V , −2A)
2SD1092 , NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
2SD1101 , Low Frequency amplifier. Collector-base voltage VCBO 25 V
2SD1111 ,NPN Epitaxial Planar Silicon Darlington Transistor Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1119 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca45˚Parameter Symbol Rating Unit 3.0±0.15Collector-base voltage ( ..
2SD1119 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD1136 , Silicon NPN Power Transistors


2SB1295

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