Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1260 R/Q |
ROHM |
N/a |
3960 |
|
|
2SB1260 T100R , Power Transistor (−80V, −1A)
2SB1260 T100Q , Power Transistor (−80V, −1A)
2SB1260 T100R , Power Transistor (−80V, −1A)
2SB1260-R , PNP Plastic-Encapsulate Transistors
2SB1260T100Q , Power Transistor (−80V, −1A)
2SD103 , isc Silicon NPN Power Transistors
2SD1030 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1033 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3TYPICAL CHARACTERISTICS (Ta = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Pr — ..