| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1245 |
HITACHI |
N/a |
8700 |
 |
LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
2SB1245C HITACHI
2SB1246 SANYO
2SB1250(35W) PANASINAC
2SB1245 , LOW FREQUENCY HIGH VOLTAGE AMPLIFIER
2SB1252 ,Power DeviceAbsolute Maximum Ratings T = 25°C 0.8±0.1CParameter Symbol Rating Unit2.54±0.3Collector-base volta ..
2SB1254 ,Power DeviceAbsolute Maximum Ratings T = 25°CC10.9±0.51: BaseParameter Symbol Rating Unit1232: CollectorCollec ..
2SB1255 ,Power DeviceAbsolute Maximum Ratings T = 25°CC10.9±0.51: BaseParameter Symbol Rating Unit1232: CollectorCollec ..
2SB1256 , 1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SD1011 ,Silicon NPN epitaxial planer type For low-frequency amplificationAbsolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings Unit +0.2 +0.20.45 –0.1 0.45 –0.1Colle ..
2SD1012 ,NPN Epitaxial Planar Silicon Transistors Low-Voltage Large-Current Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1020 ,NPN SILICON TRANSISTORFEATURES . High total power dissipation. (0.165 MAX.) (0.086 MAX.)
PT = 350 mW
. High hFE and l ..
