| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1182T201R |
ROHM |
N/a |
10900 |
 |
|
| 2SB1182T201R |
ROHM |
N/a |
800 |
|
|
2SB1182TLQ , Power Transistor (−80V, −1A)
2SB1182TLQ , Power Transistor (−80V, −1A)
2SB1182TLR , Medium power transistor (32V,2A)
2SB1182-TL-R , Medium power transistor (32V,2A)
2SB1184 TLR , Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
2SC5930 , Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications
2SC5931 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5938A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
