Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1182-TL-R |
rohm |
N/a |
2500 |
|
Medium power transistor (32V,2A) |
2SB1182TRR ROHM
2SB1183TL ROHM
2SB1183-TL ROHM
2SB1184 SONY, Low VCE(sat). PNP silicon transistor. Epitaxial planar type
2SB1184 ROHM, Low VCE(sat). PNP silicon transistor. Epitaxial planar type
2SB1184 罗姆, Low VCE(sat). PNP silicon transistor. Epitaxial planar type
2SB1184 , Low VCE(sat). PNP silicon transistor. Epitaxial planar type
2SB1184 TLP ROHM
2SB1184 R ROHM
2SB1184 R/Q ROHM
2SB1182-TL-R , Medium power transistor (32V,2A)
2SB1184 TLR , Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
2SB1184 TL R , Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
2SB1184 TL R , Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
2SB1184 TLR , Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864.
2SC5946 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5966 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5967 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..