| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1181TLQ |
ROHM |
N/a |
2350 |
 |
Power Transistor (−80V, −1A) |
| 2SB1181TLQ |
|
N/a |
2350 |
|
Power Transistor (−80V, −1A) |
2SB1181TLR ROHM
2SB1181-TL-R rohm
2SB1182 ROHM, Low VCE(sat). Epitaxial planar type PNP silicon transistor
2SB1182 , Low VCE(sat). Epitaxial planar type PNP silicon transistor
2SB1182 /, Low VCE(sat). Epitaxial planar type PNP silicon transistor
2SB1182 Sanyo, Low VCE(sat). Epitaxial planar type PNP silicon transistor
2SB1182 TL ROHM
2SB1181TLQ , Power Transistor (−80V, −1A)
2SB1182 TL Q , Power Transistor (−80V, −1A)
2SB1182 TLQ , Power Transistor (−80V, −1A)
2SB1182-R , PNP Silicon Epitaxial Transistors
2SB1182TLQ , Power Transistor (−80V, −1A)
2SC5930 , Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications
2SC5931 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5938A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
