| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1181 TL Q |
ROHM |
N/a |
20000 |
 |
Power Transistor (−80V, −1A) |
2SB1181 TL R ROHM
2SB1181 TL R/Q ROHM
2SB1181-Q ROHM
2SB1181-Q ROHM
2SB1181S-R ROHM
2SB1181 TL Q , Power Transistor (−80V, −1A)
2SB1181TLQ , Power Transistor (−80V, −1A)
2SB1181TLQ , Power Transistor (−80V, −1A)
2SB1182 TL Q , Power Transistor (−80V, −1A)
2SB1182 TLQ , Power Transistor (−80V, −1A)
2SC5909 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5909. ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC 0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-ba ..
2SC5913 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
