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2SB1151L UTC N/a 56



2SB1155 ,Silicon PNP epitaxial planar type(For power switching)Absolute Maximum Ratings (T =25˚C)n C2.0– 0.1–Parameter Symbol Ratings Unit1.1– 0.1 0.6– 0.2Collec ..
2SB1156 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit5.45±0.310.9±0.5Collector-base volta ..
2SB1162 , Silicon PNP Power Transistors
2SB1163 , SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER
2SB1165 ,PNP Epitaxial Planar Silicon Transistors 50V/5A Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5885 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitEmitter-base ..
2SC5886A , High-Speed Switching Applications
2SC5890 , Silicon NPN Epitaxial UHF / VHF wide band amplifier
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