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2SB1114-2SB1114-T1 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
2SB1114SKN/a100000avaiSilicon transistor
2SB1114NECN/a17910avaiSilicon transistor
2SB1114-T1 |2SB1114T1NECN/a30710avaiSilicon transistor


2SB1114 ,Silicon transistorFEATURES q Wbrld Standard Miniature Pa'ckage ELECTRICAL tHAR/urrERismci (Ta = 25 °c) '0 High ..
2SB1114-T1 ,Silicon transistorollllhlEiiiC DATA SHEET SILICON TRANSISTOR ZSB1114 PNP SILICON EPITAXIAL TRANSISTOR -. ..
2SB1115 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES . World Standard MiniaturePackage . Low VCE(sat). VCE(sat) = -0.2 V at 1 A O Compleme ..
2SB1115 ,PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oC) . CHARACTERISTIC SYMBOL UNIT -d TEST CONDITIONS _ --100 ..
2SB1115A ,80 V, 2 A, 2 W silicon transistorFEATURES . World Standard MiniaturePackage . Low VCE(sat). VCE(sat) = -0.2 V at 1 A O Compleme ..
2SB1115A ,80 V, 2 A, 2 W silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC) . CHARACTERISTIC SYMBOL UNIT -d TEST CONDITIONS _ --100 ..
2SC5669 ,NPN Bipolar Transistor for Audio Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5682 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5686 ,Silicon NPN triple diffusion mesa typeAbsolute Maximum Ratings T = 25°CC0.7±0.1Parameter Symbol Rating Unit5.45±0.310.9±0.5Collector-bas ..
2SC5686 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5692 , High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5694 ,DC / DC Converter ApplicationsOrdering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2 ..


2SB1114-2SB1114-T1

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