| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1065/2SD1506 |
ROHM |
N/a |
1000 |
 |
|
2SB1067 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS.APPLICATIONSHigh DC Current Gain: hFE='2000(Min.)(VCE=-2V, IC=-1A) I -1,-tt-y:--ijrlhr--t 7" ll ILo ..
2SB1068 ,PNP SILICON TRANSISTORFEATURES. 0 Low Collector Saturation Voltage
VCEisat) :-0.25 V TYP. (IC =--1.0 A, Iss r=--10 mA) ..
2SB1068 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
hFE1 DC Current Gain 135 350 650
hFE2 DC Current Gain . ..
2SB1073 ,Small-signal deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SB1073 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type
