| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1058-AE |
HIT |
N/a |
5000 |
 |
|
2SB1063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1064 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1067 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS.APPLICATIONSHigh DC Current Gain: hFE='2000(Min.)(VCE=-2V, IC=-1A) I -1,-tt-y:--ijrlhr--t 7" ll ILo ..
2SB1068 ,PNP SILICON TRANSISTORFEATURES. 0 Low Collector Saturation Voltage
VCEisat) :-0.25 V TYP. (IC =--1.0 A, Iss r=--10 mA) ..
2SB1068 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
hFE1 DC Current Gain 135 350 650
hFE2 DC Current Gain . ..
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type
