Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SB1051K T146Q |
ROHM |
N/a |
3000 |
|
|
2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1056 ,SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIERAbsolute Maximum Ratings ('faz25 'C)2SD1487 ‘fUnit 2 mm5.2max.15.5 x._ 69m? F2.“. mm. VCD21.0i0.52. ..
2SB1063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1064 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SB1067 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS.APPLICATIONSHigh DC Current Gain: hFE='2000(Min.)(VCE=-2V, IC=-1A) I -1,-tt-y:--ijrlhr--t 7" ll ILo ..
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5619 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5620 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type