| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1037-Q |
PANASONIC|Panasonic |
N/a |
1000 |
 |
|
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1056 ,SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIERAbsolute Maximum Ratings ('faz25 'C)2SD1487 ‘fUnit 2 mm5.2max.15.5 x._ 69m? F2.“. mm. VCD21.0i0.52. ..
2SB1063 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SC5609 ,Silicon PNP epitaxial planer typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 60 VCBOC ..
2SC5609 ,Silicon PNP epitaxial planer typeTransistors2SC5609Silicon PNP epitaxial planer typeUnit: mmFor general amplification+0.05 +0.050.33 ..
2SC5609 ,Silicon PNP epitaxial planer typeFeatures+0.05 12• High foward current transfer ratio h 0.23FE –0.02(0.40)(0.40)SSS-mini type packag ..
