| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SB1035-T11-E |
MITSUBISHI |
N/a |
1028 |
 |
|
2SB1036 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1048 , Silicon PNP Epitaxial, Darlington
2SB1054 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SB1056 ,SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIERAbsolute Maximum Ratings ('faz25 'C)2SD1487 ‘fUnit 2 mm5.2max.15.5 x._ 69m? F2.“. mm. VCD21.0i0.52. ..
2SC5606 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5606-T1 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE ?HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5606NPN SILICON RF TRANSISTOR FORLOW NOISE ..
2SC5609 ,Silicon PNP epitaxial planer typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector to base voltage V 60 VCBOC ..
