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Partno Mfg Dc Qty AvailableDescript
2SB0710PanasonicN/a21925avaiSmall-signal device
2SB0710AChangdianN/a15000avaiSmall-signal device
2SB710APANASONICN/a36000avaiSmall-signal device


2SB710A ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1.9±0.1+0.20Parameter Symbol Rating Unit2.90–0.052SB0710 V −30 V ..
2SB716 , Silicon PNP Epitaxial
2SB720 , isc Silicon PNP Power Transistor
2SB733 ,PNP SILICON TRANSISTORFEATURES audio frequency amplifiers. . High D.C. Current Gain' The 288733 is designed for ..
2SB734 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 ''C) CHARACTER ISTIC DC Current Gain DC Current Gain Ga ..
2SB736 ,AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD)FEATURES 0 Micro package. 1 , High DC current gain. hFE : 200 TYP. (I/ce =- 1.0 V, IC =- sd m ..
2SD1694 ,NPN SILICON POWER TRANSISTORFEATURES The 2SD1694 is High hFE and Low VcEisat) transistor. hammer driver. 0 High DC Cur ..
2SD1695 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNE ..
2SD1697 , NPN SILICON TRANSISTOR
2SD1697 , NPN SILICON TRANSISTOR
2SD1699 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oC) ***Pu|sed: PW s 350 us, Duty Cycle s 2 % hFE Classifi ..
2SD1699-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC) ***Pu|sed: PW s 350 us, Duty Cycle s 2 % hFE Classifi ..


2SB0710-2SB0710A-2SB710A

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