| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA999 |
MITSUBISHI |
N/a |
1500 |
 |
2SA999 |
| 2SA999 |
MIT |
N/a |
7000 |
|
2SA999 |
2SAA992-EA NEC
2SAB8 HITACHI
2SAC4181A NEC
2SAR513P T100 ROHM
2SA999 , 2SA999
2SAR523EB , General purpose transistor(-50V,-0.1A)
2SB0710 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SB0710A ,Small-signal deviceapplications or generalelectronic equipment (such as office equipment, communications equipment, me ..
2SB0766 ,Small-signal deviceFeatures• Large collector power dissipation PC• Mini type package, allowing downsizing of the equip ..
2SC5503 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5504 ,NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier ApplicationsFeatures Package Dimensions · Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21 ..
2SC5505 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.8±0.1 0.55±0.15Parameter Symbol Rating UnitCollector-base volt ..
