| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA970-GR |
Toshiba|TOSHIBA |
N/a |
610 |
 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
| 2SA970-GR |
ToshibaGR/BL|TOSHIBA |
N/a |
12000 |
|
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
2SA970-GR(F,T) TOS
2SA970-GR(F,T) TOSHIBA
2SA970Y TOS
2SA979 MIT, DUAL TRANSISTOR
2SA97A NEC
2SA970-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA984 , LOW FREQUENCY POWER AMP APPLICATIONS
2SA984-K , LOW FREQUENCY POWER AMP APPLICATIONS
2SA988 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
SYMBOL CHARACTERISTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SA992 ,PNP SILICON TRANSISTORFEATURES . High Voltage. VCEO I -120 V 52 MAX.
0 Low Output Capacitance. Cob : 2.0 pF TYP. (VCB =- ..
2SC5464 , NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SC5465 , SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
2SC5472 ,Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1: BaseCollector to base voltage V 9 ..
