IC Phoenix
 
Home ›  2210 > 2SA940A,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS.
2SA940A Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SA940ATOSHIBAN/a10avaiTRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS.


2SA940A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS.ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SA949 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA952 ,PNP SILICON TRANSISTORPNP SILICON TRANSISTOR 2SAS52 DESCRIPTION The 2SA952 is designed for use in output stage of p ..
2SA953 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C) CHARACTERISTIC DC Current Gain DC Current Gain TYP. M ..
2SA954 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C) SYMBOL CHARACTERISTIC . TYP. MAX. UNIT DC Current Gain ..
2SA965 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SC5406 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5408 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5408-T1 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT1EPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5409 ,NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATIONT97PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROW ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5411 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION O ..


2SA940A
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS.
TOSHIBA 2SA940A
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SA940A
POWER AMPLIFIER APPLICATIONS Unit in mm
VERTICAL OUTPUT APPLICATIONS
0 Complementary to 2SC2073A
110MW,
0.75A0.15
2.541025 2.541025
MAXIMUM RATINGS (Tc = 25°C) '/2 1 2 3 2
CHARACTERISTIC SYMBOL RATING UNIT E=2E:j§
Collector-Base Voltage VCBO - 150 V o Q
Collector-Emi; Voltage VCEO - 150 V 1. BASE
Emitter-Base Voltage VEBO - 5 V g' Eall'lfggm
Collector Current 1C - 1.5 A
Base Current IB -0.5 A JEDEC -
Collector Power Ta = 25°C P 2.0 W JEITA SC-67
Dissipation Te = 25°C C 25 TOSHIBA 2-10R1A
J unction Temperature Tj 150 "C Weight : 1.7g (Typ.)
Storage Temperature Range Tstg -55--150 °C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 10 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 10 PA
DC Current Gain hFE VCE = -10V, IC-- -500mA 40 75 140
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - - 500mA, 1B - - 50mA - - - 1.5 V
Base-Emitter Voltage VBE VCE = - 10V, IC = - 500mA -0.65 - 0.75 - 0.85 V
Transition Frequency fT VCE = - 10V, 1C = -500rnA - 4 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 55 - pF
1 2001-10-29
TOSHIBA
IC - VCE
COMMON EMITTER
Te = 25''C
10 (A)
COLLECTOR CURRENT
-16 -20
0 - 4 - 8
COLLECTOR-EMITTER VOLTAGE VCE
hFE - IC
COMMON
EMITTER
VCE = - 10V
Te = 100°C
DC CURRENT GAIN hFE
-0.3 -1 -3
- 0.01 - 0.03
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
-3 IC/IB =10
Tc=25°C
VCE (sat) (V)
VOLTAGE
COLLECTOR-EMITTER SATURATION
-0.3 -1 -3
IC (A)
COLLECTOR CURRENT
-0.01 -0.03
COLLECTOR DISSIPATION PC (W)
COLLECTOR CURRENT 10 (A)
2SA940A
PC - Ta
T, Te = Ta
INFINITE HEAT
co SINK
N <2) 200x200x2mmAe
N. HEAT SINK
N cp, 100x 100x2mmAe
'N. HEAT SINK
C2) N co 50 x50 xzmmAe
's 's, HEAT SINK
(5) "s, Ca) NO HEAT SINK
T "sd"ss
AMBIENT TEMPERATURE Ta
SAFE OPERATING AREA
lllll l
"10 MAX. (PULSED) X
CONTINUOUS)
X SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
VCEO -
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA940A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
:
www.loq.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED