| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA937 |
ROHM |
N/a |
1500 |
 |
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
| 2SA937 |
|
N/a |
2650 |
|
EPITAXIAL PLANAR PNP SILICON TRANSISTORS |
2SA937A ROHM
2SA937Q ROHM
2SA937-R ROHM
2SA940 TOSH, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940 FSC/TOS, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940 TOS, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940 FAI, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940 FSC, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940 KEC, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940. FSC, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940. TOS, PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA940-2 FSC
2SA940-2 FAIRCHIL
2SA940-2 FAIRCHILD
2SA937 , EPITAXIAL PLANAR PNP SILICON TRANSISTORS
2SA940A ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS.ELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SA949 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA952 ,PNP SILICON TRANSISTORPNP SILICON TRANSISTOR
2SAS52
DESCRIPTION The 2SA952 is designed for use in output stage of p ..
2SA953 ,PNP SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 °C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
TYP. M ..
2SC5390 , Silicon NPN Epitaxial High Frequency Amplifier
2SC5392 ,For high breakdown voltage high-speed switchingElectrical Characteristics (T =25˚C)n CParameter Symbol Conditions min typ max UnitCollector cutof ..
2SC5404 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
