Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA81 |
HITACHI |
N/a |
28 |
|
|
2SA811A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-L ,Silicon transistorNEC
ELECTRON DEVICE
SILICON TRANSISTOR
' 2SAtrl 1 A
' AUDIO FREQUENCY HIGH GAIN AMPLIFI ..
2SA811A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA812 ,AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES ' ,
PACKAGE DIMENSIONS q Complementary to 2SCI623
in millimeters
. High DC Current ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applicationsapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..