| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA800 |
NEC|NEC |
N/a |
845 |
 |
|
2SA811A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-L ,Silicon transistorNEC
ELECTRON DEVICE
SILICON TRANSISTOR
' 2SAtrl 1 A
' AUDIO FREQUENCY HIGH GAIN AMPLIFI ..
2SA811A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA812 ,AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES ' ,
PACKAGE DIMENSIONS q Complementary to 2SCI623
in millimeters
. High DC Current ..
2SC5316 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5317FT ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)APPLICATIONS Unit in mm(CHIP : fT = 16 GHz series):t1.2 i 0.05no . nn:Low Noise Figure : NF = 1.3 d ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
