| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA777Q |
MITSUBISHI |
N/a |
75 |
 |
|
2SA794 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca0.75±0.10.5±0.1Parameter Symbol Rating Unit0.5±0.1 1.76±0.14.6±0 ..
2SA811A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-L ,Silicon transistorNEC
ELECTRON DEVICE
SILICON TRANSISTOR
' 2SAtrl 1 A
' AUDIO FREQUENCY HIGH GAIN AMPLIFI ..
2SA811A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT processes.unit:mm · Large current capacitance. ..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5316 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
