2SA777 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.2Collector-base voltage (Emitter ..
2SA794 ,Power DeviceAbsolute Maximum Ratings T = 25°Ca0.75±0.10.5±0.1Parameter Symbol Rating Unit0.5±0.1 1.76±0.14.6±0 ..
2SA811A ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-L ,Silicon transistorNEC
ELECTRON DEVICE
SILICON TRANSISTOR
' 2SAtrl 1 A
' AUDIO FREQUENCY HIGH GAIN AMPLIFI ..
2SA811A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SA811A-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
UNIT
TYP MAX.
T TEST CONDITIONS
A/CBO --120 v
..
2SC5307 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS.ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT processes.unit:mm · Large current capacitance. ..
2SC5310 ,NPN Epitaxial Planar Silicon Transistors DC/DC Converter ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5316 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (fT=16GHz Series)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcurr ..
2SC5317FT ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications (CHIP: fT=16GHz series)APPLICATIONS Unit in mm(CHIP : fT = 16 GHz series):t1.2 i 0.05no . nn:Low Noise Figure : NF = 1.3 d ..
2SC5319 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = ..
2SA777
