| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA671 |
|
N/a |
14 |
 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
2SA672A HITACHI
2SA673 , TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SA673 HIT, TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SA673 HITACHI, TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SA673 Pana, TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SA673 HITA, TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
2SA673-AC HIT
2SA673ACTZ HITACHI
2SA673ACTZ REN
2SA673AKC
2SA673C HITACHI
2SA673C HIT
2SA673-C HITACHI
2SA673-CC HIT
2SA673CTZ HIT
2SA673CTZ HITACHI
2SA673D HIT
2SA671 , PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
2SA675(A)-T ,Silicon transistor
2SA683 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SA0683 V −30 VCollector-base voltag ..
2SA683 ,Small-signal deviceTransistors2SA0683, 2SA0684 (2SA683, 2SA684)Silicon PNP epitaxial planar typeUnit: mm5.9±0.2 4.9±0. ..
2SA684 ,TO-92L PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit2SA0683 V −30 VCollector-base voltag ..
2SC5210 , FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE
2SC5216 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5226 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
