| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA504 |
TOSHIBA|TOSHIBA |
N/a |
189 |
 |
Conductor Products, Inc. - SILICON PNP EPITAXIAL |
2SA504X TOSHIBA
2SA504X TOS
2SA509 TOS
2SA504 ,Conductor Products, Inc. - SILICON PNP EPITAXIAL
2SA510 ,SILICON PNP EPITAXIAL TYPETOSHIBA 4H)TSCRETE/()PT()1.9097250 TOSHIBA (DISCRETE IOPTO)HIGH FREQUENCY AMPLIFIER
2SA510 ,SILICON PNP EPITAXIAL TYPEFEATURES.. .. High Breakdown Voltage ' VcEty---1001l (2SA510), VcEtr-s-60V. Various Uses for Medium ..
2SA512 ,SILICON PNP EPITAXIAL TYPEAPPLICATIONSUnit in mmg5939MAX.MAXIMUM RATINGS _ (Ta=25°C)CHARACTERISTICl - v l ZSASIOCol ector Bas ..
2SA539-Y , LOW FREQUENCY AMPLIFIER
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SC5161 TL B , High voltage switching transistor (400V, 2A)
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
