| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA2166 |
MITSUBISHI |
N/a |
3000 |
 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
2SA2166-T112-1W ISAHAYA
2SA2167-T111-1C MITSUBIS
2SA2167-T111-1E MITSUBIS
2SA2167-T111-1E SANYO
2SA2166 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA2168 , 2SA2168
2SA2180 , PNP Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching
2SA2180 , PNP Epitaxial Planar Silicon Transistor 50V / 5A High-Speed Switching
2SA2183 ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage ..
2SC5094 ,Dual Inverter (open drain) with 3.6 V Tolerant Input and OutputApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095-O , VHF~UHF Band Low Noise Amplifier Applications
