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2SA2060(TE12L,F) TOSHIBA|TOSHIBA N/a 1000
2SA2060(TE12L,F) TOS|TOSHIBA N/a 1000



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2SA2064 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2065 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter s ..
2SA2066 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications  High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter s ..
2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
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2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100Q , Medium power transistor (50V, 1A)
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