Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA2060(TE12L,F) |
TOSHIBA|TOSHIBA |
N/a |
1000 |
|
|
2SA2060(TE12L,F) |
TOS|TOSHIBA |
N/a |
1000 |
|
|
2SA2061 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = 0.5 A) FE C Low collector-emitter sat ..
2SA2064 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2065 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.15 A) FE C Low collector-emitter s ..
2SA2066 ,Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter ApplicationsApplications High DC current gain: h = 200 to 500 (I = −0.2 A) FE C Low collector-emitter s ..
2SA2067 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100Q , Medium power transistor (50V, 1A)
2SC5053 T100Q , Medium power transistor (50V, 1A)