2SA2039 ,PNP Epitaxial Planar Silicon Transistors High Current Switching ApplicationsFeatures[2SA2039 / 2SC5706]• Adoption of FBET, MBIT process.6.52.35.0•Large current capacitance.0.5 ..
2SA2039-TL-E , Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2039-TL-E , Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2039-TL-E , Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2040 ,PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
2SA2046 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5029 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS Unit 1n mmLow Saturation Voltage'' A '-Nt fnhM: v CE (sat) = U.0 v (max)0 High Collect ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)nC0.75– 0.1Parameter Symbol Ratings UnitCollector to base voltag ..
2SC5034 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Featuresnf 3.2– 0.1l High collector to emitter VCEOl High-speed switching––l Full-pack package with ..
2SC5039 , 2SC5039
2SC5044 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsOrdering number: EN 4782A2805044NPN Triple Diffused Planar Silicon TransistorUltrahigh-Definition C ..
2SC5044 ,Ultrahigh-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at, Ta = 25°C unitCollector-to-Base Voltage VCBO 1600 VCollector-to-Emi; V ..
2SA2039
