| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1993 |
MITSUBISHI |
N/a |
13993 |
 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) |
| 2SA1993 |
MIT |
N/a |
4000 |
|
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) |
2SA1993-T MITSUBISHI
2SA1993 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA2002 , FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
2SA2004 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA2005 , For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)
2SA2005. , For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)
2SC5005-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SC5006 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI ..
2SC5006-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5006NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI ..
