| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1989 |
MITSUBISHI |
N/a |
15300 |
 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
| 2SA1989 |
MIT |
N/a |
36000 |
|
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
2SA1989-T111-1Q ISAHAYA
2SA1989-T111-1R SANYO
2SA1989-T111-1R ISAHAYA
2SA1989-T111-1R/TR MITSUSHI
2SA1989-T11-1R SANYO
2SA1989-T11-1R MIT
2SA1989-T11-1S MITSUMI
2SA1992 MIT
2SA1989 , For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini
2SA1993 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1993 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA2002 , FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
2SA2004 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SC5004 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDFEATURES• High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)3• Low Cre : 0.9 pF TYP. (@ VCB ..
2SC5004-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5004NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI MOLDDES ..
