2SA1955 ,Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch ApplicationApplications Unit: mmSwitching and Muting Switch Application Low saturation voltage: V (1) = ..
2SA1962 ,PNP Epitaxial Silicon Transistorapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1962 ,PNP Epitaxial Silicon TransistorFeatures• High Current Capability: I = -17ACTO-3P• High Power Dissipation : 130watts 1• High Freque ..
2SA1962-O , Power Amplifier Applications
2SA1962OTU , PNP Epitaxial Silicon Transistor
2SA1962RTU , PNP Epitaxial Silicon Transistor
2SC4934 , Silicon NPN Epitaxial
2SC4934E , Silicon NPN Epitaxial
2SC4934E , Silicon NPN Epitaxial
2SC4934-E , Silicon NPN Epitaxial
2SC4935 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SA1955
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955 General Purpose Amplifier Applications
Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA Large collector current: IC = −400 mA (max)
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 2.4 mg (typ.)
