| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1940-O |
TOSHIBA|TOSHIBA |
N/a |
550 |
 |
|
2SA1941 ,Trans GP BJT PNP 140V 10A 3-Pin(3+Tab) TO-3PNELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PLAPPLICATIONS Unit in mmI ?DRMAX d22+n7 IO Complementary to 28051990 Recommend for 80W High Fidelity ..
2SA1942 ,Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL2SA1942POWER AMPLIFIER
2SA1943 ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SA1943. ,PNP Epitaxial Silicon TransistorAPPLICATIONS Unit in mmI 20.5MAX. g3.3:o.2 IO Complementary to 28052000 Recommended for 100W High F ..
2SC4901YK-TL-E , Silicon NPN Epitaxial
2SC4908 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4909 ,NPN Epitaxial Planar Silicon Transistor Muting Circuits, DriversAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
