2SA1887 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1908 , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1923 ,Transistor Silicon PNP Triple Diffused Type High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = −400 V CEO Low saturation voltage: V = −1 V (max) C ..
2SA1924 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS2SA1924ZSA1924HIGH VOLTAGE SWITCHING
2SA1924 ,TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONSAPPLICATIONS Unit in mm0 High Voltage : VCEO = -400V 2.0 Low Saturation Voltage : VCE (sat) = -1 V ..
2SA1930 ,Trans GP BJT PNP 180V 2A 3-Pin(3+Tab) TO-220NISAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fr = 200MHz (Typ.)_m'OtO ollmli::l+l ..
2SC4839 ,Transistor Silicon NPN Epitaxial Planar TypeApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC4841 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 8.5dB (f = 2 GHz) 21 ..
2SC4842 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 14dB (f = 1 GHz) 21e ..
2SC4843 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 15.5dB (f = 1 GHz) 2 ..
2SC4844 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC4849 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SA1887
Silicon PNP Power Transistors TO-220F package
TOSHIBA
2SA1887
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1887
HIGH CURRENT SWITCHING APPLICATIONS
0 Low Collector Saturation Voltage
: VCE (sat) = -0.4V (Max.) at 10 = -5A
MAXIMUM RATINGS (Tc = 25°C)
0.75 l 0.15
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT 2.54 , 0.25 2.54 , 0.25
Collector-Base Voltage VCBO - 80 V 'd-l 1 2 3 :3 N
Collector-Emitter Voltage VCEO -50 V I,',,-':'"--, :13;
Emitter-Base Voltage VEBO - 7 V d - q.
Collector Current 10 - 10 A l. BASE
2. COLLECTOR
fylyto.1.' Power Ta=25°C PC 2.0 W 3. EMITTER
Dissipation Tc = 25°C 25 JEDEC -
J unction Temperature Tj 150 "C JEIT A SC-67
Storage Temperature Range Tstg - 55-- 150 "C TOSHIB A 2-10RI A
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 70V, IE = 0 - - - 1 pA
Emitter Cut-off Current IEBO VEB = - 7V, IC = 0 - - - 1 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - - lOmA, IB - 0 - 50 - - V
DC Current Gain hFE VCE = - IV, IC = - IA 120 - 400
Saturation Collector-Emitter VCE (sat) IC = - 5A, IB = - 0.25A - - 0.2 - 0.4 V
Voltage Base-Emitter VBE (sat) IC = - 5A, IB = - 0.25A - -0.95 - 1.4
Transition Frequency fT VCE = - IV, IC = - IA - 45 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = 1MHz - 215 - pF
2001 -1 0-29
TOSHIBA ZSA1887
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
2 2001-10-29
:
www.loq.com
.
