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2SA1837.. |2SA1837TOSN/a971avaiSilicon PNP Power Transistors TO-220F package
2SA1837TOSN/a3000avaiSilicon PNP Power Transistors TO-220F package
2SA1837. |2SA1837TOSN/a150avaiSilicon PNP Power Transistors TO-220F package


2SA1837 ,Silicon PNP Power Transistors TO-220F packageTOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE7§A1227POWER AMPLIFIER
2SA1837. ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrc ..
2SA1837.. ,Silicon PNP Power Transistors TO-220F packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1862 , High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
2SA1869 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1870 , High-speed Switching Transistor (-60V, -12A)
2SC4805G ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC4808 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4810 ,Silicon power transistorDATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SC4813 ,Silicon power transistorDATA SHEETSILICON POWER TRANSISTOR2SC4813NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SC4815 ,Silicon power transistorfeatures low VCE(sat) and high hFE.This transistor is ideal for use as a driver in DC/DC converters ..
2SC4821 ,NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..


2SA1837-2SA1837.-2SA1837..
Silicon PNP Power Transistors TO-220F package
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE
POWER AMPLIFIER APPLICATIONS
DRIVER STAGE AMPLIFIER APPLICATIONS
MAXIMUM RATINGS (Tc = 25°C)
High Transition Frequency : fT=70MHz (Typ.)
Complementary to 2SC4793
2SA1837
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.75 , 0.15
Collector-Base Voltage VCBO - 230 V 2. , 0.2 2.54 t 0.25
Collector-Emi) Voltage VCEO - 230 V :3 1 2 3 _:3 N
Emitter-Base Voltage VEBO - 5 V EE::[ 3:
Collector Current IC - 1 A d 2,-
Base Current IB -0.1 A l. BASE
2. COLLECTOR
fylteto.1.' Power Ta = 25°C PC 2.0 W 3. EM ITTER
Dissipation Te = 25°C 20 JEDEC -
J unction Temperature Tj 150 "C JEIT A -
Storage Temperature Range Tstg - 55--150 "C TOSHIB A 2-10R1A
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 230V, IE = 0 - - - 1.0 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 1.0 PA
Collector-Emi;
Breakdown Voltage V(BR)CEO 1C - - lOmA, 1B - 0 - 230 - - V
DC Current Gain hFE VCE = - 5V, 1C = - 100mA 100 - 320
Collector-Emi;
Saturation Vol tage VCE (sat) IC - -500mA, IB - - 50mA - - - 1.5 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 500mA - - - 1.0 V
Transition Frequency fT VCE = - 10V, 1C = - 100mA - 70 - MHz
Collector Output Capacitance Cob VCB = - 10V, IC = 0, f = lMHz - 3O - pF
2001 -1 0-29
TOSHIBA
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hpE
TRANSITION FREQUENCY fT (MHz)
IC - VCE
IB=-2mA
COMMON
EMITTER
Tc = 25°C
0 - 2 - 4 - 6 - 8 - 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - 1C
COMMON
EMITTER
500 VCE = - 5V
Te = 100''C
100 25
50 -25
-0.003 -0.01 -0.03
- 0.3 - 1 - 3
COLLECTOR CURRENT IC (A)
fp - IC
COMMON
EMITTER
VCE = - 10V
Tc=25°C
-5 -10 -30
COLLECTOR CURRENT 1C (mA)
-300 -1000
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
10 (A)
COLLECTOR CURRENT
E VCE (sat) (V)
VOLTA G
LH.003
2SA1837
IC - VBE
COMMON
EMITTER
VCE = - 5V
Tc =100''C 25 - 25
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
COMMON
EMITTER
IC /13 = 10
Te-- 100''C
-0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
llllllll Ill I
I l I 1 I [III Ill I
IC MAX.(PULSED)Y.f ..e 1ms)i(.
IC MAX. 1,r'C----- 10msR..
(CONTINUOUS) l " - 100ms).k.
DC OPERATION t
1' ['1' 4
.yk. SINGLE NONREPETITIVE al',
PULSE Tc=25°C N ,
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
- 3 - 10 - 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
-100 -300
2001 -1 0-29
TOSHIBA ZSA1837
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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