2SA1836 ,PNP transistorFEATURES • High DC current gain: hFE2 = 200 TYP. 30 to 0.1• High voltage: VCEO = −50 V • Can be aut ..
2SA1837 ,Silicon PNP Power Transistors TO-220F packageTOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE7§A1227POWER AMPLIFIER
2SA1837. ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc=25°C) g g ypCHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrc ..
2SA1837.. ,Silicon PNP Power Transistors TO-220F packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1862 , High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
2SA1869 ,Silicon PNP Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4804 , Silicon NPN Power Transistors
2SC4805 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4805 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC4805G ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC4808 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4810 ,Silicon power transistorDATA SHEETDARLINGTON POWER TRANSISTOR2SC4810NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CO ..
2SA1836
