Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1787E |
SANYO|SANYO |
N/a |
2400 |
|
|
2SA1790 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1797 T100Q , Power Transistor (−50V, −3A)
2SA1797 T100Q , Power Transistor (−50V, −3A)
2SA1797T100Q , Power Transistor (−50V, −3A)
2SA1804 ,Silicon PNP Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC4694 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High DC current gain.2059B · High ..
2SC4695 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High DC current gain.2018B · High ..
2SC4702 , High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.