Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1734(TE12L) |
TOSHIBA|TOSHIBA |
N/a |
955 |
|
|
2SA1735 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) (I = −500 mA) CE (sat) C High speed ..
2SA1736 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) (I = −1.5 A) CE (sat) C High speed s ..
2SA1737 ,For video amplifierElectrical Characteristics (Ta=25˚C)nParameter Symbol Conditions min typ max UnitCollector cutoff ..
2SA1738 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1739 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4627J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4630 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4630LS ,NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..