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2SA1730S-TD SANYO|SANYO N/a 1000



2SA1731 ,PNP Epitaxial Planar Silicon Transistor High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT processes.unit:mm · Large current capacity.204 ..
2SA1734 ,Transistor Silicon PNP Triple Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications  Low saturation voltage: V = −0.5 V (max) (I = −700 mA) CE (sat) C  High speed ..
2SA1734 ,Transistor Silicon PNP Triple Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
2SA1735 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications  Low saturation voltage: V = −0.5 V (max) (I = −500 mA) CE (sat) C  High speed ..
2SA1736 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications  Low saturation voltage: V = −0.5 V (max) (I = −1.5 A) CE (sat) C  High speed s ..
2SC4627 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca5˚Parameter Symbol Rating UnitCollector-base voltage (Emitter op ..
2SC4627J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4630 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter ..
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