| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1611-T1-A |
NEC|NEC |
N/a |
12000 |
 |
|
2SA1612 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (T, =25 "C) _
Z
SYMBOL TYP. AX. UNIT
tCBO
CHARACTERISTIC
..
2SA1612-T1 ,Silicon transistorNEC
2SA1612-T1 ,Silicon transistorNEC
2SA1612-T2 ,Silicon transistorNEC
2SA1615 ,Silicon transistorFEATURES• Large current capacity:IC(DC): −10 A, IC(pulse): −15 A High hFE and low collector satur ..
2SC4486 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4488 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4489 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
