| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1611-GR |
TOSHIBA|TOSHIBA |
N/a |
1169 |
 |
|
2SA1611-T1 ,Silicon transistorFEATURES
' Complementary to 28C4177
0 High DC Current Gain: hFE = 200 TYP. (VCE = —6.0 V, Ic ..
2SA1612 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (T, =25 "C) _
Z
SYMBOL TYP. AX. UNIT
tCBO
CHARACTERISTIC
..
2SA1612-T1 ,Silicon transistorNEC
2SA1612-T1 ,Silicon transistorNEC
2SA1612-T2 ,Silicon transistorNEC
2SC4478 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta-- 25°C unit _Collector.to Base Voltage VCBO 400 VCollector-toEmitLer ..
2SC4480 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, General Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4481 ,NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
