| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1455K |
ROHM |
N/a |
3000 |
 |
High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.) |
| 2SA1455K |
ROHM |
N/a |
3000 |
|
High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.) |
2SA1458-KM NEC
2SA1459-K NEC
2SA1460-L NEC
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1461 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDtttEC
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ELECTRON DEVICE //////
SILICONfWTEANVSISToRM
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HIGH FREQUENC ..
2SA1461-T1B ,Silicon transistortttEC
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ELECTRON DEVICE //////
SILICONfWTEANVSISToRM
'.ti/N1llltllf'F'1
HIGH FREQUENC ..
2SA1461-T2B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 2
CHARACTERISTIC SYMBOL
Collector Cutoff Current ICBO.
Emit ..
2SA1462 ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL _ . . . TEST CONDITIONS
(q Collec ..
2SC4183 ,RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4184 ,UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4185 ,UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
