| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1412-Z-E1 |
NEC|NEC |
N/a |
50000 |
 |
|
2SA1413 ,PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Collector to Base Vohage Vcao -60t) V
Co ..
2SA1415 ,PNP Epitaxial Planar Silicon Transistors High-Voltage Switching, Predriver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1425 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1431 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1434 ,PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4167 , NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC4169 ,NPN Epitaxial Planar Silicon Transistor Driver ApplicationsAbsolute Maximum Ratings at Ta= 25''CCollector to Base VoltageCollector to Emitter VoltageEmitter t ..
2SC4173 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR
