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2SA1363 TOSHIBA|TOSHIBA N/a 36000 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1363 MITSUBISHI N/a 221300 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE



2SA1363/AE NEC
2SA1363-AE TOS
2SA1363F-T1-AF MITSUBISHI
2SA1363-T111-1E MITSUBISHI
2SA1363-T111-1E
2SA1363-T111-1E MITSUBIS
2SA1363-T111-1F Mitsubishi
2SA1363-T111-1G MIT
2SA1363-T111-1G MITSUBISH
2SA1363-T11-1E SANYO
2SA1363-T11-1F SANYO
2SA1363-T11-1F MITSUBIS
2SA1363-T11-1F MITSUBISHI
2SA1363-T13-1E MIT
2SA1364 MITSUBISHI, High Voltage VCEO = -60V High Collector Dissipation PC = 500mW Small Package For Mounting
2SA1364 MIT, High Voltage VCEO = -60V High Collector Dissipation PC = 500mW Small Package For Mounting
2SA1364-T11 MITSUBISH
2SA1364-T111-1DE ISAHAYA
2SA1364-T111-1E ISAHAYA
2SA1364-T11-2E MITSUBISHI
2SA1364-T113-1E MITSUBISHI
2SA1364-T113-1E
2SA1364-T53-1E MITSUBISHI
2SA1363 , FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1365 , Low collector to emitter saturation voltage. High collector current.
2SA1366 , FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA1369 , High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW
2SA1369 , High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4109 ,NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
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