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2SA1358N/a1652avaiTrans GP BJT PNP 120V 1A 3-Pin TO-126IS


2SA1358 ,Trans GP BJT PNP 120V 1A 3-Pin TO-126ISELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1359 ,Silicon PNP Power Transistors TO-126 packageapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1359 ,Silicon PNP Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1360 ,Trans GP BJT PNP 150V 0.05A 3-Pin TO-126ISapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1360 ,Trans GP BJT PNP 150V 0.05A 3-Pin TO-126ISELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1362 ,TransistorApplications  High DC current gain: h = 120~400 FE Low saturation voltage: V = −0.2 V (max) ..
2SC4102 , NPN 50mA 120V High Voltage Amplifier transistors
2SC4105 ,NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4106 ,NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..
2SC4107 ,NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..


2SA1358
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
25A1358
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
2SA1358
Unit in mm
8.3MAX.
l 5.8 gt 3.1:0.1
0 Complementary to 2SC3421 21 u; 'd m
f "sy'?. oi g
o Suitable for Driver of 60 to 80 Watts. 3 J L. x. g i
0 High Breakdown Voltage. I ii. F
MAXIMUM RATINGS (Tc = 25°C) .
1.9MAX. g
CHARACTERISTIC SYMBOL RATING UNIT (h75t0.15 'is'
Collector-Base Voltage VCBO -120 V
Collector-Emi; Voltage VCEO -120 V ,22--'0",
Emitter-Base Voltage VEBO -5 V _ , 2
-i ' ' _ E
Collector Current IC -1 A 'C':-,'. m m p "i'---'--]]!:',.
Base Current IB -100 mA E l. EMITTER
g?“1ss1 a mu = o
If Te 25 C 10 JEDE C -
Junction Temperature Tj 150 C JEIT A -
Storage Temperature Range Tstg -55--150 C TOSHIB A 2-8H1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
Weight .' 0.82g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 100 nA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 100 nA
Collector-Emi;
Breakdown Voltage V (BR) CEO IC - - 10mA, IB - 0 - 120 - - V
Emitter-Base
Breakdown Voltage V (BR) EBO IE - - lmA, IC - 0 -5 - - V
DC Current Gain hFE VCE = -5V 10 = - 100mA 80 - 240
(Note) '
Collector-Emi)
Saturation Vol tage VCE (sat) IC - - 500mA, IB - - 50mA - - 0.40 - 1.0 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 500mA - - 0.77 - 1.0 V
Transition Frequency fT VCE = - 5V, IC = - 100mA - 120 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 30 - pF
(Note) : hFE Classification
0 .. 80--160, Y : 120--240
2001 -1 0-29
TOSHIBA
2SA1358
IC - VCE
COMMON EMITTER
a" Tc=25°C -15
g-1000
E -800
D -600 -5
F, -400 -3
o -200 IB---lmA
0 - 2 - 4 - 6 - 8 - 10 _ 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
Ic / IB = 10
Tc = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT 1C (mA)
T, Tc=Ta
INFINITE HEAT SINK
(2 NO HEAT SINK
COLLECTOR POWER DISSIPATION
PC (W)
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
A hFE - IC
g 1000
v COMMON EMITTER
J.? 500 VCE---5V
z 300 Tc=100°C
ti',: I I
ted 100 -25
U) -3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT 1C (mA)
IC - VBE
COMMON EMITTER
$5 1rcE---5V
V -800
Tc= 100°C 25
COLLECTOR CURRENT
0 -ih2 -0.4 -0.6 -0.8 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-3000 I I I I
IC MAX.(PULSED) lk. 1msy.4
I I I I I I I l / . .
IC MAX. VCC-ere,
(CONTINUOUS) 'tl V /100ms>:<
A - 1000 , Le
< 's h h ,
D -500 N, \ l
E -300 DC OPERATION l \)
3:: Tc=25°C \ YN
n: '61
Cy N)),
g -100 \
_} -50 V
8 X SINGLE NONREPETITIVE l
-30 PULSE Tc=25°C
CURVES MUST BE DARATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEIO 'IA'?
-3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1358
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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