Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SA1330-T2B/06 |
NEC|NEC |
N/a |
3100 |
|
|
2SA1331 ,High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1331 ,High-Speed Switching ApplicationsFeatures Package Dimensions · Fast switching speed.unit:mm · High breakdown voltage.2018A · Small-s ..
2SA1338 ,High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High breakdown voltage : V =(–)50V ..
2SA1339 ,High-Speed Switching ApplicationsFeatures Package Dimensions · Very small-sized package permitting sets to be small-unit:mmsized, sl ..
2SA1341 ,PNP/NPN Epitaxial Planar Silicon TransistorsSANYO SEMICONDUCTOR CORP BEE D " 7937075 0007332 5 "28A1341, _ T-37-I328C3395 Q -r-3S -/ /PNP/NPN E ..
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4093-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4094 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD