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2SA1314TOSHIBAN/a77700avaiTransistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications


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2SA1314
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1314

Strobe Flash Applications
Audio Power Applications High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.), (VCE = -1 V, IC = −4 A) Low saturation voltage
: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Small package Complementary to 2SC2982
Maximum Ratings (Ta = 25°C)

Note 1: Pulse test: pulse width = 10 mS (max), duty cycle = 30% (max)
Note 2: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
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