2SA1297 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) @I = −2 A CE (sat) C Complementary to ..
2SA1298 ,Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching ApplicationsApplications High DC current gain: h = 100~320 FE Low saturation voltage: V = −0.4 V (max) ..
2SA1301 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1301 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1303 , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1304 ,Trans GP BJT PNP 150V 1.5A 3-Pin TO-220ISELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 2.1gCHARACTERISTIC SYMBOL TEST CONDITION UNITCollect ..
2SC4048 ,Switching ApplicationsFeatures. On-chip bias resistance: RI=10ku,Rr--47kn. &rta11-tsiztrd package: SPA( ): ZSA156|OAbsolu ..
2SC4050 , Silicon NPN Epitaxial
2SC4050KIETR , Silicon NPN Epitaxial
2SC4050KIE-TR , Silicon NPN Epitaxial
2SC4051 , Switching Power Transistor(3A NPN)
2SC4051 , Switching Power Transistor(3A NPN)
2SA1297
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A Complementary to 2SC3267.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE (1) Y: 120~240, GR: 200~400
Unit: mm
Weight: 0.13 g (typ.)
