| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SA1227A |
NEC|NEC |
N/a |
21 |
 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
2SA123
2SA1232 NEC, PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
2SA1235 DIODES, Small collector to emitter saturation voltage. Excelent lineary DC forward current gain.
2SA1235 长电, Small collector to emitter saturation voltage. Excelent lineary DC forward current gain.
2SA1235 MITSUBISHI, Small collector to emitter saturation voltage. Excelent lineary DC forward current gain.
2SA1235 MIT, Small collector to emitter saturation voltage. Excelent lineary DC forward current gain.
2SA1227A , PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1237 ,DIFFERENTIAL AMP APPLICATIONSFeatures'i"i""ii"ia'"'i'"i"'iTiiai Amp Applications. Excellent; In thermal equilibrium and suited f ..
2SA1238 ,DIFFERENTIAL AMP APPLICATIONSFeatures -. Excellent In thermal equilibrium and suited for use In first-stagedifferential amp.. Lo ..
2SC3930 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C 10˚aParameter Symbol Rating UnitCollector-base voltage (Emitter ..
2SC3931 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3934 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
